異質(zhì)結(jié)雙極晶體管電路設(shè)計(jì)（英文版）

About the Author
Preface
Acknowledgments
Nomenclature
1 Introduction
1.1 Overview of Heterojunction Bipolar Transistors
1.2 Modeling and Measurement for HBT
1.3 Organization of This Book
References
2 Basic Concept of Microwave Device Modeling
2.1 Signal Parameters
2.1.1 Low-Frequency Parameters
2.1.2 S-Parameters
2.2 Representation of Noisy Two-Port Network
2.2.1 Noise Matrix
2.2.2 Noise Parameters
2.3 Basic Circuit Elements
2.3.1 Resistance
2.3.2 Capacitance
2.3.3 Inductance
2.3.4 Controlled Sources
2.3.5 Ideal Transmission Line
2.4 π- and T-Type Networks
2.4.1 T-Type Network
2.4.2 π-Type Network
2.4.3 Relationship between π- and T-Type Networks
2.5 Deembedding Method
2.5.1 Parallel Deembedding
2.5.2 Series Deembedding
2.5.3 Cascading Deembedding
2.6 Basic Methods of Parameter Extraction
2.6.1 Determination of Capacitance
2.6.2 Determination of Inductance
2.6.3 Determination of Resistance
2.7 Summary
References
3 Modeling and Parameter Extraction Methods of Bipolar
Junction Transistor
3.1 PN Junction
3.2 PN Junction Diode
3.2.1 Basic Concept
3.2.2 Equivalent Circuit Model
3.2.3 Determination of Model Parameters
3.3 BJT Physical Operation
3.3.1 Device Structure
3.3.2 The Modes of Operation
3.3.3 Base-Width Modulation
3.3.4 High Injection and Current Crowding
3.4 Equivalent Circuit Model
3.4.1 E-M Model
3.4.2 G-P Model
3.4.3 Noise Model
3.5 Microwave Performance
3.5.1 Transition Frequency
3.5.2 Common-Emitter Configuration
3.5.3 Common-Base Configuration
3.5.4 Common-Collector Configuration
3.5.5 Summary and Comparisons
3.6 Summary
References
4 Basic Principle of HBT
5 Small-Signal Modeling and Parameter Extraction of HBT
6 Large-Signal Equivalent Circuit Modeling of HRT
7 Microwave Noise Modeling and Parameter Extraction Technique for HBTs
8 SiGe HBT Modeling and Parameter Extraction
Index